Complex conductivity of UTX compounds in high magnetic fields
- Los Alamos National Laboratory
We have performed Resonance Frequency (RF) skin depth (complex-conductivity) and magnetoresistance measurements of antiferromagnetic UTX compounds (T Ni, and X := AI, Ga, Ge) in applied magnetic fields up to 60 T applied parallel to the easy directions. The RF penetration depth was measured by coupling the sample to the inductive element of a resonant tank circuit and then, measuring the shifts in the resonant frequency {Delta}f of the circuit. Shifts in the resonant frequency {Delta}f are known to be proportional to the skin depth of the sample and we find a direct correspondence between the features in {Delta}f and magnetoresistance. Several first-order metamagnetic transitions, which are accompanied by a drastic change in {Delta}f, were observed in these compounds. In general, the complex-conductivity results are consistent with magnetoresistance data.
- Research Organization:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC52-06NA25396
- OSTI ID:
- 960737
- Report Number(s):
- LA-UR-08-06297; LA-UR-08-6297; JAPIAU; TRN: US201008%%662
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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