Doping dependence of upper critical field and hall resistivity in LaFeAsO1-xFx (x=0, 0.025, 0.5, 0.07, 0.11 and 0.14)
- Los Alamos National Laboratory
- JAPAN
- TOKYO INSTIT
The electrical resistivity ({rho}{sub xx}) and Hall resistivity ({rho}{sub xy}) have been measured over wide composition range using 60 T pulsed magnets. While the superconducting phase diagram (T{sub c}, x) displays the classic dome-shaped structure, we find that the upper critical field (H{sub c2}) increases monotonically with decreasing fluorine concentration (x), with the largest H{sub c2} {>=} 75 T for x = 0.05. {rho}{sub xx} and {rho}{sub xy} data provide evidence for the multiband electronic structure for all x {<=} 0.14 in LaFeAsO{sub 1-x}F{sub x}, and demonstrate the quantum phase transition near x {approx} 0.05. Both the multiband structure and quantum phase transition play crucial roles in the large H{sub c2}.
- Research Organization:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC52-06NA25396
- OSTI ID:
- 960692
- Report Number(s):
- LA-UR-08-05972; LA-UR-08-5972; PRLTAO; TRN: US201008%%625
- Journal Information:
- Physical Review Letters, Journal Name: Physical Review Letters; ISSN 0031-9007
- Country of Publication:
- United States
- Language:
- English
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