Carbon contamination of extreme ultraviolet (EUV) mask and its effect on imaging
Carbon contamination of extreme ultraviolet (EUV) masks and its effect on imaging is a significant issue due to lowered throughput and potential effects on imaging performance. In this work, a series of carbon contamination experiments were performed on a patterned EUV mask. Contaminated features were then inspected with a reticle scanning electron microscope (SEM) and printed with the SEMA TECH Berkeley Microfield-Exposure tool (MET) [1]. In addition, the mask was analyzed using the SEMA TECH Berkeley Actinic-Inspection tool (AIT) [2] to determine the effect of carbon contamination on the absorbing features and printing performance. To understand the contamination topography, simulations were performed based on calculated aerial images and resist parameters. With the knowledge of the topography, simulations were then used to predict the effect of other thicknesses of the contamination layer, as well as the imaging performance on printed features.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- Materials Sciences Division
- DOE Contract Number:
- DE-AC02-05CH11231
- OSTI ID:
- 953235
- Report Number(s):
- LBNL-460E; TRN: US200915%%143
- Resource Relation:
- Conference: The international conference on magnetism - ICM 2009, Karlsruhe, Germany, July 26-31, 2009
- Country of Publication:
- United States
- Language:
- English
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