Point Defect Characterization in CdZnTe
Measurements of the defect levels and performance testing of CdZnTe detectors were performed by means of Current Deep Level Transient Spectroscopy (I-DLTS), Transient Charge Technique (TCT), Current versus Voltage measurements (I-V), and gamma-ray spectroscopy. CdZnTe crystals were acquired from different commercial vendors and characterized for their point defects. I-DLTS studies included measurements of defect parameters such as energy levels in the band gap, carrier capture cross sections, and defect densities. The induced current due to laser-generated carriers was measured using TCT. The data were used to determine the transport properties of the detectors under study. A good correlation was found between the point defects in the detectors and their performance.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Organization:
- Doe - National Nuclear Security Administration
- DOE Contract Number:
- DE-AC02-98CH10886
- OSTI ID:
- 950451
- Report Number(s):
- BNL-82075-2009-CP; R&D Project: 10406; NN2001000; TRN: US0901985
- Resource Relation:
- Conference: IEEE Dresden 2008; Dresden, Germany; 20081019 through 20081025
- Country of Publication:
- United States
- Language:
- English
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