Self-sputtering far above the runaway threshold: an extraordinary metal ion generator

Andersson, Joakim; Anders, Andre

Title: Self-sputtering far above the runaway threshold: an extraordinary metal ion generator

Full Record
Other Related Research

Abstract

When self-sputtering is driven far above the runaway threshold voltage, energetic electrons are made available to produce"excess plasma" far from the magnetron target. Ionization balance considerations show that the secondary electrons deliver the necessary energy to the"remote" zone. Thereby, such a system can be an extraordinarily prolific generator of useable metal ions. Contrary to other known sources, the ion current to a substrate can exceed the discharge current. For gasless self-sputtering of copper, the useable ion current scales exponentially with the discharge voltage.

Authors:: Andersson, Joakim; Anders, Andre

Publication Date:: Tue Dec 16 00:00:00 EST 2008

Research Org.:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Sponsoring Org.:: Accelerator& Fusion Research Division; Environmental Energy Technologies Division

OSTI Identifier:: 950216

Report Number(s):: LBNL-1641E
Journal ID: ISSN 0031-9007; PRLTAO; TRN: US0901972

DOE Contract Number:: DE-AC02-05CH11231

Resource Type:: Journal Article

Journal Name:: Physical Review Letters

Additional Journal Information:: Journal Volume: 102; Related Information: Journal Publication Date: 2009; Journal ID: ISSN 0031-9007

Country of Publication:: United States

Language:: English

Subject:: 70; COPPER; ELECTRONS; IONIZATION; MAGNETRONS; PLASMA; SUBSTRATES; TAIL ELECTRONS; self-sputtering, gasless sputtering, copper, run-away, ion generator, thin films

Citation Formats


                    Andersson, Joakim, and Anders, Andre. Self-sputtering far above the runaway threshold: an extraordinary metal ion generator.  United States: N. p., 2008. 
        Web.

Copy to clipboard


                    Andersson, Joakim, & Anders, Andre. Self-sputtering far above the runaway threshold: an extraordinary metal ion generator.  United States.

Copy to clipboard


                    Andersson, Joakim, and Anders, Andre. 2008.  
        "Self-sputtering far above the runaway threshold: an extraordinary metal ion generator".  United States.  https://www.osti.gov/servlets/purl/950216.

Copy to clipboard


                    
@article{osti_950216,

  title        = {Self-sputtering far above the runaway threshold: an extraordinary metal ion generator},

  author       = {Andersson, Joakim and Anders, Andre},

  abstractNote = {When self-sputtering is driven far above the runaway threshold voltage, energetic electrons are made available to produce"excess plasma" far from the magnetron target. Ionization balance considerations show that the secondary electrons deliver the necessary energy to the"remote" zone. Thereby, such a system can be an extraordinarily prolific generator of useable metal ions. Contrary to other known sources, the ion current to a substrate can exceed the discharge current. For gasless self-sputtering of copper, the useable ion current scales exponentially with the discharge voltage.},

  doi          = {},

  url          = {https://www.osti.gov/biblio/950216},
  journal      = {Physical Review Letters},

  issn         = {0031-9007},

  number       = ,

  volume       = 102,

  place        = {United States},

  year         = {Tue Dec 16 00:00:00 EST 2008},

  month        = {Tue Dec 16 00:00:00 EST 2008}

}

Copy to clipboard

Journal Article:

View Journal Article (0.48 MB)

Other availability

Find in Google Scholar

Search WorldCat to find libraries that may hold this journal

Save / Share:

Export Metadata

Save to My Library

Similar records in OSTI.GOV collections:

Self-Sputtering Far above the Runaway Threshold: An Extraordinary Metal-Ion Generator

Journal Article Andersson, Joakim; Anders, Andre - Physical Review Letters

When self-sputtering is driven far above the runaway threshold voltage, energetic electrons are made available to produce 'excess plasma' far from the magnetron target. Ionization balance considerations show that the secondary electrons deliver the necessary energy to the 'remote' zone. Thereby, such a system can be an extraordinarily prolific generator of usable metal ions. Contrary to other known sources, the ion current to a substrate can exceed the discharge current. For gasless self-sputtering of copper, the usable ion current scales exponentially with the discharge voltage.
https://doi.org/10.1103/PHYSREVLETT.102.045003
Discharge Physics of High Power Impulse Magnetron Sputtering

Journal Article Anders, Andre - Surface and Coatings Technology

High power impulse magnetron sputtering (HIPIMS) is pulsed sputtering where the peak power exceeds the time-averaged power by typically two orders of magnitude. The peak power density, averaged over the target area, can reach or exceed 107 W/m2, leading to plasma conditions that make ionization of the sputtered atoms very likely. A brief review of HIPIMS operation is given in a tutorial manner, illustrated by some original data related to the self-sputtering of niobium in argon and krypton. Emphasis is put on the current-voltage-time relationships near the threshold of self-sputtering runaway. The great variety of current pulse shapes delivers cluesmore »« less
Full Text Available
Broad, intense, quiescent beam of singly charged metal ions obtained by extraction from self-sputtering plasma far above the runaway threshold

Journal Article Anders, Andre; Oks, Efim - Journal of Applied Physics

Dense metal plasmas obtained by self-sputtering far above the runway threshold are well suited to generate intense quiescent ion beams. The dilemma of high current density and charge state purity can be solved when using target materials of low surface binding energy by utilizing non-resonant exchange reactions before ion extraction. Space-charge-limited quiescent beams of Cu+, Zn+, and Bi+ with ~;;10 mA/cm2 have been obtained through multi-aperture gridded ion extraction up to 45 kV from self-sputtering plasmas.
https://doi.org/10.1063/1.3177336

Full Text Available
Self-sputtering runaway in high power impulse magnetron sputtering: The role of secondary electrons and multiply charged metal ions

Journal Article Anders, Andre - Applied Physics Letters

Self-sputtering runaway in high power impulse magnetron sputtering is closely related to the appearance of multiply charged ions. This conclusion is based on the properties of potential emission of secondary electrons and energy balance considerations. The effect is especially strong for materials whose sputtering yield is marginally greater than unity. The absolute deposition rate increases {approx}Q{sup 1/2}, whereas the rate normalized to the average power decreases {approx}Q{sup -1/2}, with Q being the mean ion charge state number.
https://doi.org/10.1063/1.2936307
Ion acceleration and cooling in gasless self-sputtering

Journal Article Horwat, David; Anders, Andre - Applied Physics Letters

Copper plasma with hyperthermal directed velocity (8.8 eV) but very low temperature (0.6 eV) has been obtained using self-sputtering far above the runaway threshold. Ion energy distribution functions (IEDFs) were simultaneously measured at 34 locations. The IEDFs show the tail of the Thompson distribution near the magnetron target. They transform to shifted Maxwellians with the ions being accelerated and cooled. We deduce the existence of a highly asymmetric, pressure-driven potential hump which acts as a controlling"watershed" between the ion return flux and the expanding plasma.
https://doi.org/10.1063/1.3521264

Full Text Available

Similar Records