Magnetoresistance of One-Dimensional Subbands in Tunnel-Coupled Double Quantum Wires
The authors study the low-temperature in-plane magnetoresistance of tunnel-coupled quasi-one-dimensional quantum wires. The wires are defined by two pairs of mutually aligned split gates on opposite sides of a {le} 1 micron thick AlGaAs/GaAs double quantum well heterostructure, allowing independent control of the width of each quantum well. In the ballistic regime, when both wires are defined and the field is perpendicular to the current, a large resistance peak at {approximately}6 Tesla is observed with a strong gate voltage dependence. The data is consistent with a counting model whereby the number of subbands crossing the Fermi level changes with field due to the formation of an anticrossing in each pair of 1D subbands.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 9499
- Report Number(s):
- SAND99-2028J; TRN: AH200124%%293
- Journal Information:
- Physical Review B, Other Information: Submitted to Physical Review B; PBD: 4 Aug 1999
- Country of Publication:
- United States
- Language:
- English
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