Selective Oxidation Technology and its Applications Toward Electronic and Optoelectronic Devices
Selective oxidation of AlGaAs compounds has facilitated dramatic improvements in the performance of near IR VCSELS. Under the auspices of this proposal we have: (1) expanded our understanding of both the strengths and the limitations of this technology; (2) explored its applicability to other Al bearing materials; (3) utilized this technology base to demonstrate a variety of new electronic and optoelectronic devices; and (4) established the reliability and manufacturability of oxidized devices such as VCSELS. Specifically, we have investigated conditions required to maximize control of the oxidation process as well as those required to facilitate inhibit etching of the resultant oxide. Concurrently, studies were performed to extend the technology to other Al-bearing compounds such as Al(Ga)AsSb, InAl(Ga)P and Al(Ga)N. Several new devices utilizing the selective oxidation technology of AlGaAs, as well as Al(Ga)AsSb were be considered. On a separate front, we also explored the possibility of using oxidized AlGaAs and InAl(Ga)P to form GaAs/AIGaAs FETs. Finally, reliability and manufacturability issues of the high performance VCSELS fabricated using selective oxidation technology, were addressed.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 9462
- Report Number(s):
- SAND99-0921; TRN: AH200124%%266
- Resource Relation:
- Other Information: PBD: 1 Jul 1999
- Country of Publication:
- United States
- Language:
- English
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