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Title: Four-Junction Solar Cell with 40% Target Efficiency Fabricated by Wafer Bonding and Layer Transfer: Final Technical Report, 1 January 2005 - 31 December 2007

Technical Report ·
DOI:https://doi.org/10.2172/944501· OSTI ID:944501

We realized high-quality InGaP/GaAs 2-junction top cells on Ge/Si, InGaAs/InP bottom cells, direct-bond series interconnection of tandem cells, and modeling of bonded 3- and 4-junction device performance.

Research Organization:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC36-99-GO10337
OSTI ID:
944501
Report Number(s):
NREL/SR-520-44532; XAT-4-33624-10; TRN: US200902%%908
Resource Relation:
Related Information: Work performed by California Institute of Technology, Pasadena, California
Country of Publication:
United States
Language:
English