Effect of chemical etching on the surface roughness of CdZnTe and CdMnTe gamma radiation detectors
Generally, mechanical polishing is performed to diminish the cutting damage followed by chemical etching to remove the remaining damage on crystal surfaces. In this paper, we detail the findings from our study of the effects of various chemical treatments on the roughness of crystal surfaces. We prepared several CdZnTe (CZT) and CdMnTe (CMT) crystals by mechanical polishing with 5 {micro}m and/or lower grits of Al{sub 2}O{sub 3} abrasive papers including final polishing with 0.05-{micro}m particle size alumina powder and then etched them for different periods with a 2%, 5% Bromine-Methanol (B-M) solution, and also with an E-solution (HNO{sub 3}:H{sub 2}O:Cr{sub 2}O{sub 7}). The material removal rate (etching rate) from the crystals was found to be 10 {micro}m, 30 {micro}m, and 15 {micro}m per minute, respectively. The roughness of the resulting surfaces was determined by the Atomic Force Microscopy (AFM) to identify the most efficient surface processing method by combining mechanical and chemical polishing.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Organization:
- Doe/Office Of Nonproliferation & National Security
- DOE Contract Number:
- DE-AC02-98CH10886
- OSTI ID:
- 937156
- Report Number(s):
- BNL-81418-2008-CP; R&D Project: 10517; NN2001050; TRN: US0805991
- Resource Relation:
- Conference: 2008 SPIE Conference on Hard X-Ray, Gamma-Ray and Neutron Detector Physics X; San Diego, CA; 20080811 through 20080814
- Country of Publication:
- United States
- Language:
- English
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