University Photovoltaic Research, Education, and Collaboration. Final Report
This report summarizes the progress made by Georgia Tech in the 2000-2006 period towards high-efficiency low-cost crystalline silicon solar cells. The overall goal of the program is to advance the current state of crystalline silicon solar cell technology in order to make photovoltaics more competitive with the conventional energy sources. A combination of material characterization, device modeling, low-cost technology development, cell fabrication and analysis have been used to achieve the goals of this program. Quality enhancement techniques have been developed to achieve high lifetime in commercial substrates. At the same time, advanced concepts and cell designs were developed to achieve high-efficiency cells on low-cost substrates. Low-cost in-line processing, novel diffusion techniques, and improved and screen-printed contacts were used to incorporate advanced design features in commercial cells. The program has also focused on the development of screen-printing pastes and contact firing to obtain high fill factors on high sheet resistance emitters with narrow grid lines. This report is divided into seven sections that summarize our work on i) high-efficiency monocrystalline cells through the achievement of ohmic contacts to high sheet resistance emitters by screen printing (Sections 1 and 2); ii) process and material factors that limit the potential of the Al-doped back surface field (Sections 3 and 4); iii) high-efficiency cells on low-cost multicrystalline wafers through defect gettering and passivation (Section 5); iv) low-cost phosphorus emitter diffusion in a novel in-line furnace (Section 6); and iv) the development of a 2D model to determine the effects of physical cell parameters on the performance of IBC (interdigitated back contact) solar cells (Section 7).
- Research Organization:
- Georgia Institute of Technology, Atlanta, GA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FC36-00GO10600
- OSTI ID:
- 936176
- Report Number(s):
- DOE/GO/10600-FINAL; TRN: US201217%%310
- Country of Publication:
- United States
- Language:
- English
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