A fully 3D atomistic quantum mechanical study on random dopant induced effects in 25nm MOSFETs
We present a fully 3D atomistic quantum mechanical simulation for nanometered MOSFET using a coupled Schroedinger equation and Poisson equation approach. Empirical pseudopotential is used to represent the single particle Hamiltonian and linear combination of bulk band (LCBB) method is used to solve the million atom Schroedinger's equation. We studied gate threshold fluctuations and threshold lowering due to the discrete dopant configurations. We compared our results with semiclassical simulation results. We found quantum mechanical effects increase the threshold fluctuation while decreases the threshold lowering. The increase of threshold fluctuation is in agreement with previous study based on approximated density gradient approach to represent the quantum mechanical effect. However, the decrease in threshold lowering is in contrast with the previous density gradient calculations.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- Computational Research Division
- DOE Contract Number:
- DE-AC02-05CH11231
- OSTI ID:
- 935712
- Report Number(s):
- LBNL-723E; IETDAI; TRN: US200816%%857
- Journal Information:
- IEEE Transactions on electron devices, Vol. 55; Related Information: Journal Publication Date: 2008; ISSN 0018-9383
- Country of Publication:
- United States
- Language:
- English
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