Mg-induced increase of bandgap in Zn1-xMgxO nanorods revealed by x-ray absorption and emission spectroscopy

Journal Article · Thu Jul 10 00:00:00 EDT 2008 · Journal of Applied Physics

OSTI ID:935703

Pong, Way-Faung; Chiou, J W; Tsai, H M; Pao, C W; Chien, F Z; Pong, W F; Chen, C W; Tsai, M -H; Wu, J J; Ko, C H; Chiang, H H; Lin, H -J; Lee, J F; Guo, J -H

X-ray absorption near-edge structure (XANES) and x-ray emission spectroscopy (XES) measurements were used to investigate the effect of Mg doping in ZnO nanorods. The intensities of the features in the O K-edge XANES spectra of Zn{sub 1-x}Mg{sub x}O nanorods are lower than those of pure ZnO nanorods, suggesting that Mg doping increases the negative effective charge of O ions. XES and XANES spectra of O 2p states indicate that Mg doping raises (lowers) the conduction-band-minimum (valence-band-maximum) and increases the bandgap. The bandgap is found to increase linearly with the Mg content, as revealed by photoluminescence and combined XANES and XES measurements.

• Research Organization: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
• Sponsoring Organization: Advanced Light Source Division
• DOE Contract Number: DE-AC02-05CH11231
• OSTI ID: 935703
• Report Number(s): LBNL-730E; JAPIAU; TRN: US200816%%848
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36
ABSORPTION
EFFECTIVE CHARGE
EMISSION SPECTROSCOPY
PHOTOLUMINESCENCE
SPECTRA