Distribution of zinc, resistivity, and photosensitivity in a Vertical Bridgman grown Cd1-xZnxTe ingot.
Conference
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OSTI ID:928740
We present the results of a comprehensive study of distribution of zinc, resistivity, and photosensitivity in a Cd{sub 1-x}Zn{sub x}Te ingot grown by the Vertical Bridgman method. We used several complementary methods, viz., glow discharge mass spectroscopy, photoluminescence-, resistivity-, and photosensitivity-mapping, along with photo-induced current transient spectroscopy to characterize the material. We identified electronic levels in the band-gap responsible for compensation, recombination, and photosensitivity.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Organization:
- Doe - National Nuclear Security Administration
- DOE Contract Number:
- DE-AC02-98CH10886
- OSTI ID:
- 928740
- Report Number(s):
- BNL-80227-2008-CP; R&D Project: 10517; YN2001050; TRN: US200812%%349
- Resource Relation:
- Conference: IEEE Nuclear Science Symposium and Medical Imaging Conference; Dresden, Germany; 20081019 through 20081025
- Country of Publication:
- United States
- Language:
- English
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· Journal of Electronic Materials
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OSTI ID:928740