Method for measuring and controlling beam current in ion beam processing

Patent · Tue Apr 29 00:00:00 EDT 2003

OSTI ID:921308

Kearney, Patrick A ^[1]; Burkhart, Scott C ^[1]

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1. Livermore, CA

A method for producing film thickness control of ion beam sputter deposition films. Great improvements in film thickness control is accomplished by keeping the total current supplied to both the beam and suppressor grids of a radio frequency (RF) in beam source constant, rather than just the current supplied to the beam grid. By controlling both currents, using this method, deposition rates are more stable, and this allows the deposition of layers with extremely well controlled thicknesses to about 0.1%. The method is carried out by calculating deposition rates based on the total of the suppressor and beam currents and maintaining the total current constant by adjusting RF power which gives more consistent values.

• Research Organization: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: W-7405-ENG-48
• Assignee: The Regents of the University of California (Oakland, CA)
• Patent Number(s): 6,554,968
• Application Number: 09/670,921
• OSTI ID: 921308
• Country of Publication: United States
• Language: English