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Title: 3-D readout-electronics packaging for high-bandwidth massively paralleled imager

Abstract

Dense, massively parallel signal processing electronics are co-packaged behind associated sensor pixels. Microchips containing a linear or bilinear arrangement of photo-sensors, together with associated complex electronics, are integrated into a simple 3-D structure (a "mirror cube"). An array of photo-sensitive cells are disposed on a stacked CMOS chip's surface at a 45.degree. angle from light reflecting mirror surfaces formed on a neighboring CMOS chip surface. Image processing electronics are held within the stacked CMOS chip layers. Electrical connections couple each of said stacked CMOS chip layers and a distribution grid, the connections for distributing power and signals to components associated with each stacked CSMO chip layer.

Inventors:
 [1];  [2]
  1. Los Alamos, NM
  2. Albuquerque, NM
Publication Date:
Research Org.:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
921054
Patent Number(s):
7,309,878
Application Number:
10/901,309
Assignee:
U.S. Department of Energy (Washington, DC)
DOE Contract Number:  
W-7405-ENG-36
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Kwiatkowski, Kris, and Lyke, James. 3-D readout-electronics packaging for high-bandwidth massively paralleled imager. United States: N. p., 2007. Web.
Kwiatkowski, Kris, & Lyke, James. 3-D readout-electronics packaging for high-bandwidth massively paralleled imager. United States.
Kwiatkowski, Kris, and Lyke, James. 2007. "3-D readout-electronics packaging for high-bandwidth massively paralleled imager". United States. https://www.osti.gov/servlets/purl/921054.
@article{osti_921054,
title = {3-D readout-electronics packaging for high-bandwidth massively paralleled imager},
author = {Kwiatkowski, Kris and Lyke, James},
abstractNote = {Dense, massively parallel signal processing electronics are co-packaged behind associated sensor pixels. Microchips containing a linear or bilinear arrangement of photo-sensors, together with associated complex electronics, are integrated into a simple 3-D structure (a "mirror cube"). An array of photo-sensitive cells are disposed on a stacked CMOS chip's surface at a 45.degree. angle from light reflecting mirror surfaces formed on a neighboring CMOS chip surface. Image processing electronics are held within the stacked CMOS chip layers. Electrical connections couple each of said stacked CMOS chip layers and a distribution grid, the connections for distributing power and signals to components associated with each stacked CSMO chip layer.},
doi = {},
url = {https://www.osti.gov/biblio/921054}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Dec 18 00:00:00 EST 2007},
month = {Tue Dec 18 00:00:00 EST 2007}
}