Si Passivation and Chemical Vapor Deposition of Silicon Nitride: Final Technical Report, March 18, 2007
This report investigated chemical and physical methods for Si surface passivation for application in crystalline Si and thin Si film photovoltaic devices. Overall, our efforts during the project were focused in three areas: i) synthesis of silicon nitride thin films with high hydrogen content by hot-wire chemical vapor deposition; ii) investigation of the role of hydrogen passivation of defects in crystalline Si and Si solar cells by out diffusion from hydrogenated silicon nitride films; iii) investigation of the growth kinetics and passivation of hydrogenated polycrystalline. Silicon nitride films were grown by hot-wire chemical vapor deposition and film properties have been characterized as a function of SiH4/NH3 flow ratio. It was demonstrated that hot-wire chemical vapor deposition leads to growth of SiNx films with controllable stoichiometry and hydrogen.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC36-99-GO10337
- OSTI ID:
- 919971
- Report Number(s):
- NREL/SR-520-42325; AAT-2-31605-01; TRN: US200825%%404
- Resource Relation:
- Related Information: Work performed by California Institute of Technology, Pasadena, California
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
DEFECTS
DIFFUSION
HYDROGEN
KINETICS
PASSIVATION
SILICON NITRIDES
SOLAR CELLS
STOICHIOMETRY
SYNTHESIS
THIN FILMS
PV
SILICON
HOT-WIRE CHEMICAL VAPOR DEPOSITION
NITRIDE
SURFACE PASSIVATION
CRYSTALLINE SI
THIN SI FILM
HYDROGEN PASSIVATION
GROWTH KINETICS
Solar Energy - Photovoltaics