Ultrahigh density ferroelectric storage and lithography by high order ferroic switching

Patent · Tue Nov 06 00:00:00 EST 2007

OSTI ID:919404

Kalinin, Sergei V ^[1]; Baddorf, Arthur P ^[1]; Lee, Ho Nyung ^[2]; Shin, Junsoo ^[1]; Gruverman, Alexei L ^[3]; Karapetian, Edgar ^[4]; Kachanov, Mark ^[5]

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1. Knoxville, TN
2. Oak Ridge, TN
3. Raleigh, NC
4. Malden, MA
5. Arlington, MA

A method for switching the direction of polarization in a relatively small domain in a thin-film ferroelectric material whose direction of polarization is oriented normal to the surface of the material involves a step of moving an electrically-chargeable tip into contact with the surface of the ferroelectric material so that the direction of polarization in a region adjacent the tip becomes oriented in a preselected direction relative to the surface of the ferroelectric material. The tip is then pressed against the surface of the ferroelectric material so that the direction of polarization of the ferroelectric material within the area of the ferroelectric material in contact with the tip is reversed under the combined effect of the compressive influence of the tip and electric bias.

• Research Organization: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC05-00OR22725
• Assignee: UT-Battelle, LLC (Oak Ridge, TN)
• Patent Number(s): 7,292,768
• Application Number: 11/409,740
• OSTI ID: 919404
• Country of Publication: United States
• Language: English