Compositional tuning of ferromagnetism in Ga1-xMnxP

Farshchi, R; Scarpulla, M A; Stone, P R; Yu, K M; Sharp, I D; Beeman, J W; Silvestri, H H; Reichertz, L A; Haller, E E; Dubon, O D

doi:10.1016/j.ssc.2006.09.010

Title: Compositional tuning of ferromagnetism in Ga1-xMnxP

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Abstract

We report the magnetic and transport properties of Ga{sub 1-x}Mn{sub x}P synthesized via ion implantation followed by pulsed laser melting over a range of x, namely 0.018 to 0.042. Like Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P displays a monotonic increase of the ferromagnetic Curie temperature with x associated with the hole-mediated ferromagnetic phase while thermal annealing above 300 C leads to a quenching of ferromagnetism that is accompanied by a reduction of the substitutional fraction of Mn. However, contrary to observations in Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P is non-metallic over the entire composition range. At the lower temperatures over which the films are ferromagnetic, hole transport occurs via hopping conduction in a Mn-derived band; at higher temperatures it arises from holes in the valence band which are thermally excited across an energy gap that shrinks with x.

Authors:: Farshchi, R; Scarpulla, M A; Stone, P R; Yu, K M; Sharp, I D; Beeman, J W; Silvestri, H H; Reichertz, L A; Haller, E E; Dubon, O D

Publication Date:: Tue May 23 00:00:00 EDT 2006

Research Org.:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Sponsoring Org.:: USDOE Director. Office of Science. Basic EnergySciences

OSTI Identifier:: 918811

Report Number(s):: LBNL-61577
Journal ID: ISSN 0038-1098; SSCOA4; R&D Project: 513390; BnR: KC0201030; TRN: US200819%%456

DOE Contract Number:: DE-AC02-05CH11231

Resource Type:: Journal Article

Journal Name:: Solid State Communications

Additional Journal Information:: Journal Volume: 140; Related Information: Journal Publication Date: 2006; Journal ID: ISSN 0038-1098

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; ANNEALING; CURIE POINT; ENERGY GAP; FERROMAGNETISM; ION IMPLANTATION; LASERS; MELTING; QUENCHING; TRANSPORT; TUNING; VALENCE

Citation Formats


                    Farshchi, R, Scarpulla, M A, Stone, P R, Yu, K M, Sharp, I D, Beeman, J W, Silvestri, H H, Reichertz, L A, Haller, E E, and Dubon, O D. Compositional tuning of ferromagnetism in Ga1-xMnxP.  United States: N. p., 2006. 
        Web.  doi:10.1016/j.ssc.2006.09.010.

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                    Farshchi, R, Scarpulla, M A, Stone, P R, Yu, K M, Sharp, I D, Beeman, J W, Silvestri, H H, Reichertz, L A, Haller, E E, & Dubon, O D. Compositional tuning of ferromagnetism in Ga1-xMnxP.  United States.  https://doi.org/10.1016/j.ssc.2006.09.010

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                    Farshchi, R, Scarpulla, M A, Stone, P R, Yu, K M, Sharp, I D, Beeman, J W, Silvestri, H H, Reichertz, L A, Haller, E E, and Dubon, O D. 2006.  
        "Compositional tuning of ferromagnetism in Ga1-xMnxP".  United States.  https://doi.org/10.1016/j.ssc.2006.09.010.  https://www.osti.gov/servlets/purl/918811.

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@article{osti_918811,

  title        = {Compositional tuning of ferromagnetism in Ga1-xMnxP},

  author       = {Farshchi, R and Scarpulla, M A and Stone, P R and Yu, K M and Sharp, I D and Beeman, J W and Silvestri, H H and Reichertz, L A and Haller, E E and Dubon, O D},

  abstractNote = {We report the magnetic and transport properties of Ga{sub 1-x}Mn{sub x}P synthesized via ion implantation followed by pulsed laser melting over a range of x, namely 0.018 to 0.042. Like Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P displays a monotonic increase of the ferromagnetic Curie temperature with x associated with the hole-mediated ferromagnetic phase while thermal annealing above 300 C leads to a quenching of ferromagnetism that is accompanied by a reduction of the substitutional fraction of Mn. However, contrary to observations in Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P is non-metallic over the entire composition range. At the lower temperatures over which the films are ferromagnetic, hole transport occurs via hopping conduction in a Mn-derived band; at higher temperatures it arises from holes in the valence band which are thermally excited across an energy gap that shrinks with x.},

  doi          = {10.1016/j.ssc.2006.09.010},

  url          = {https://www.osti.gov/biblio/918811},
  journal      = {Solid State Communications},

  issn         = {0038-1098},

  number       = ,

  volume       = 140,

  place        = {United States},

  year         = {Tue May 23 00:00:00 EDT 2006},

  month        = {Tue May 23 00:00:00 EDT 2006}

}

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