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Title: Radiation aging of stockpile and space-based microelectronics.

Technical Report ·
DOI:https://doi.org/10.2172/918391· OSTI ID:918391

This report describes an LDRD-supported experimental-theoretical collaboration on the enhanced low-dose-rate sensitivity (ELDRS) problem. The experimental work led to a method for elimination of ELDRS, and the theoretical work led to a suite of bimolecular mechanisms that explain ELDRS and is in good agreement with various ELDRS experiments. The model shows that the radiation effects are linear in the limit of very low dose rates. In this limit, the regime of most concern, the model provides a good estimate of the worst-case effects of low dose rate ionizing radiation.

Research Organization:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
OSTI ID:
918391
Report Number(s):
SAND2003-4783; TRN: US0805365
Country of Publication:
United States
Language:
English