High rate buffer layer for IBAD MgO coated conductors
Patent
·
OSTI ID:913429
- Los Alamos, NM
Articles are provided including a base substrate having a layer of an oriented material thereon, and, a layer of hafnium oxide upon the layer of an oriented material. The layer of hafnium oxide can further include a secondary oxide such as cerium oxide, yttrium oxide, lanthanum oxide, scandium oxide, calcium oxide and magnesium oxide. Such articles can further include thin films of high temperature superconductive oxides such as YBCO upon the layer of hafnium oxide or layer of hafnium oxide and secondary oxide.
- Research Organization:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- W-7405-ENG-36
- Assignee:
- Los Alamos National Security, LLC (Los Alamos, NM)
- Patent Number(s):
- 7,258,927
- Application Number:
- 11/021,800
- OSTI ID:
- 913429
- Country of Publication:
- United States
- Language:
- English
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