Tailoring nanocrystalline diamond film properties
Patent
·
OSTI ID:913005
- Downers Grove, IL
- Somerville, MA
- Orlando, FL
- Naperville, IL
A method for controlling the crystallite size and growth rate of plasma-deposited diamond films. A plasma is established at a pressure in excess of about 55 Torr with controlled concentrations of hydrogen up to about 98% by volume, of unsubstituted hydrocarbons up to about 3% by volume and an inert gas of one or more of the noble gases and nitrogen up to about 98% by volume. The volume ratio of inert gas to hydrogen is preferably maintained at greater than about 4, to deposit a diamond film on a suitable substrate. The diamond film is deposited with a predetermined crystallite size and at a predetermined growth rate.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- W-31109-ENG-38
- Assignee:
- The University of Chicago (Chicago, IL)
- Patent Number(s):
- 6,592,839
- Application Number:
- 09/255,919
- OSTI ID:
- 913005
- Country of Publication:
- United States
- Language:
- English
Effects of noble gases on diamond deposition from methaneâhydrogen microwave plasmas
|
journal | August 1990 |
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