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Title: Design and fabrication of 6.1-.ANG. family semiconductor devices using semi-insulating A1Sb substrate

Patent ·
OSTI ID:909427
 [1];  [1];  [2]
  1. Livermore, CA
  2. Cupertino, CA
+ Show Author Affiliations

For the first time, an aluminum antimonide (AlSb) single crystal substrate is utilized to lattice-match to overlying semiconductor layers. The AlSb substrate establishes a new design and fabrication approach to construct high-speed, low-power electronic devices while establishing inter-device isolation. Such lattice matching between the substrate and overlying semiconductor layers minimizes the formation of defects, such as threaded dislocations, which can decrease the production yield and operational life-time of 6.1-.ANG. family heterostructure devices.

Research Organization:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
W-7405-ENG-48
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Number(s):
7,224,041
Application Number:
10/856,175
OSTI ID:
909427
Country of Publication:
United States
Language:
English

References (12)

Antimony-based quaternary alloys for high-speed low-power electronic devices conference January 2002
Metamorphic AlSb/InAs HEMT for low-power, high-speed electronics
  • Tsai, R.; Barsky, M.; Boos, J. B.
  • GaAs IC Symposium. 25th Annual Technical Digest 2003, 25th Annual Technical Digest 2003. IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. https://doi.org/10.1109/GAAS.2003.1252415
conference January 2003
InAs/InAsP composite channels for antimonide-based field-effect transistors journal January 2004
Monolithic integration of resonant interband tunneling diodes and high electron mobility transistors in the InAs/GaSb/AlSb material system
  • Bennett, B. R.; Bracker, A. S.; Magno, R.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 18, Issue 3 https://doi.org/10.1116/1.591482
journal January 2000
Charge-collection dynamics of AlSb-InAs-GaSb resonant interband tunneling diodes (RITDs) [for MOBILE logic circuits] journal January 2001
Modeling electron mobility in MBE-grown InAs/AlSb thin films for HEMT applications using neural networks journal October 2002
RF and DC characteristics of low-leakage InAs/AlSb HFETs conference January 2002
Bilayer growth period oscillation of the Sb2 reactivity during molecular beam epitaxy of AlSb (001) journal December 1997
MBE of wide bandgap II–VI compounds journal January 1990
Stoichiometry-induced roughness on antimonide growth surfaces journal April 2001
Bias and Temperature Dependence of Sb-Based Heterostructure Millimeter-Wave Detectors With Improved Sensitivity journal January 2004
Sb-heterostructure interband backward diodes journal July 2000

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