Laser-based irradiation apparatus and methods for monitoring the dose-rate response of semiconductor devices

Horn, Kevin M

Title: Laser-based irradiation apparatus and methods for monitoring the dose-rate response of semiconductor devices

Patent · Tue Mar 28 00:00:00 EST 2006

OSTI ID:908537

Horn, Kevin M ^[1]

Albuquerque, NM

A scanned, pulsed, focused laser irradiation apparatus can measure and image the photocurrent collection resulting from a dose-rate equivalent exposure to infrared laser light across an entire silicon die. Comparisons of dose-rate response images or time-delay images from before, during, and after accelerated aging of a device, or from periodic sampling of devices from fielded operational systems allows precise identification of those specific age-affected circuit structures within a device that merit further quantitative analysis with targeted materials or electrical testing techniques. Another embodiment of the invention comprises a broad-beam, dose rate-equivalent exposure apparatus. The broad-beam laser irradiation apparatus can determine if aging has affected the device's overall functionality. This embodiment can be combined with the synchronized introduction of external electrical transients into a device under test to simulate the electrical effects of the surrounding circuitry's response to a radiation exposure.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC04-94AL85000

Assignee:: Sandia Corporation (Albuquerque, NM)

Patent Number(s):: 7,019,311

OSTI ID:: 908537

Country of Publication:: United States

Language:: English

References (15)

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