Method of defining features on materials with a femtosecond laser
Patent
·
OSTI ID:908416
- Los Altos, CA
- Livermore, CA
The invention relates to a pulsed laser ablation method of metals and/or dielectric films from the surface of a wafer, printed circuit board or a hybrid substrate. By utilizing a high-energy ultra-short pulses of laser light, such a method can be used to manufacture electronic circuits and/or electro-mechanical assemblies without affecting the material adjacent to the ablation zone.
- Research Organization:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- W-7405-ENG-48
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Number(s):
- 7,049,543
- Application Number:
- 10/704,459
- OSTI ID:
- 908416
- Country of Publication:
- United States
- Language:
- English
Similar Records
Physical mechanisms of SiN{sub x} layer structuring with ultrafast lasers by direct and confined laser ablation
Study of Passivation in the Gap Region Between Contacts of Interdigitated-Back-Contact Silicon Heterojunction Solar Cells: Simulation and Voltage-Modulated Laser-Beam-Induced-Current
Proof of damage-free selective removal of thin dielectric coatings on silicon wafers by irradiation with femtosecond laser pulses
Journal Article
·
Sat Mar 14 00:00:00 EDT 2015
· Journal of Applied Physics
·
OSTI ID:908416
+1 more
Study of Passivation in the Gap Region Between Contacts of Interdigitated-Back-Contact Silicon Heterojunction Solar Cells: Simulation and Voltage-Modulated Laser-Beam-Induced-Current
Journal Article
·
Tue Jan 23 00:00:00 EST 2018
· IEEE Journal of Photovoltaics
·
OSTI ID:908416
+2 more
Proof of damage-free selective removal of thin dielectric coatings on silicon wafers by irradiation with femtosecond laser pulses
Journal Article
·
Sun Jul 15 00:00:00 EDT 2012
· Journal of Applied Physics
·
OSTI ID:908416
+2 more