Physical properties of erbium implanted tungsten oxide filmsdeposited by reactive dual magnetron sputtering
Amorphous and partially crystalline WO3 thin films wereprepared by reactive dual magnetron sputtering and successively implantedby erbium ions with a fluence in the range from 7.7 x 1014 to 5 x 1015ions/cm2. The electrical and optical properties were studied as afunction of the film deposition parameters and the ion fluence. Ionimplantation caused a strong decrease of the resistivity, a moderatedecrease of the index of refraction and a moderate increase of theextinction coefficient in the visible and near infrared, while theoptical band gap remained almost unchanged. These effects could belargely ascribed to ion-induced oxygen deficiency. When annealed in air,the already low resistivities of the implanted samples decreased furtherup to 70oC, whereas oxidation, and hence a strong increase of theresistivity, was observed at higher annealing temperatures.
- Research Organization:
- COLLABORATION - Sohag University, Sohag,Egypt
- DOE Contract Number:
- DE-AC02-05CH11231
- OSTI ID:
- 903504
- Report Number(s):
- LBNL-62248; THSFAP; R&D Project: 677616; TRN: US200720%%394
- Journal Information:
- Thin Solid Films, Vol. 515; Related Information: Journal Publication Date: 2007; ISSN 0040-6090
- Country of Publication:
- United States
- Language:
- English
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