Noise Characteristics of 100nm-scaleGaAs/Al_xGa_{1-x}As Scanning Hall Probes

Journal Article · Fri Mar 23 00:00:00 EDT 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2717565· OSTI ID:901253

Hicks, C W; Luan, L; Moler, K A; Zeldov, E

The authors have fabricated and characterized GaAs/Al{sub x}Ga{sub 1-x}As two-dimensional electron gas scanning Hall probes for imaging perpendicular magnetic fields at surfaces. The Hall crosses range from 85 x 85 to 1000 x 1000 nm{sup 2}. They study low-frequency noise in these probes, especially random telegraph noise, and show that low-frequency noise can be significantly reduced by optimizing the voltage on a gate over the Hall cross. The authors demonstrate a 100 nm Hall probe with a sensitivity of 0.5 G/{radical}Hz (flux sensitivity of 0.25m {Phi}{sub 0}/{radical}Hz; spin sensitivity of 1.2 x 10{sup 4} {mu}{sub B}/{radical}Hz) at 3 Hz and 9 K.

• Research Organization: SLAC National Accelerator Lab., Menlo Park, CA (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC02-76SF00515
• OSTI ID: 901253
• Report Number(s): SLAC-PUB-12378; APPLAB; TRN: US200713%%220
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

47 OTHER INSTRUMENTATION
GALLIUM ARSENIDES
ALUMINIUM ARSENIDES
NOISE
HALL EFFECT
ELECTRON GAS
PROBES
SENSITIVITY
SPIN
PERFORMANCE
MATSCI