Lithographic measurement of EUV flare in the 0.3-NA Micro ExposureTool optic at the Advanced Light Source
The level of flare present in a 0.3-NA EUV optic (the MET optic) at the Advanced Light Source at Lawrence Berkeley National Laboratory is measured using a lithographic method. Photoresist behavior at high exposure doses makes analysis difficult. Flare measurement analysis under scanning electron microscopy (SEM) and optical microscopy is compared, and optical microscopy is found to be a more reliable technique. In addition, the measured results are compared with predictions based on surface roughness measurement of the MET optical elements. When the fields in the exposure matrix are spaced far enough apart to avoid influence from surrounding fields and the data is corrected for imperfect mask contrast and aerial image proximity effects, the results match predicted values quite well. The amount of flare present in this optic ranges from 4.7% for 2 {micro}m features to 6.8% for 500 nm features.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Director. Office of Science, Office of Basic EnergySciences; Advanced Micro Devices, Applied Materials, Atmel, Cadence,Canon, Cymer, DuPont, Ebara, Intel, KLA-Tencor, Mentor Gaphics, NikonResearch, Novellus /systems, Panoramic Technologies, Photronics,Synopsis, Tokyo Electron, UC Discovery Grant
- DOE Contract Number:
- DE-AC02-05CH11231
- OSTI ID:
- 900651
- Report Number(s):
- LBNL-60543; R&D Project: M50034; BnR: 600303000; TRN: US0702358
- Resource Relation:
- Conference: Microlithography Emerging LithographicTechnologies IX, San Jose, CA, 02/27-03/04/2005
- Country of Publication:
- United States
- Language:
- English
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