Studies of Basic Electronic Properties of CdTe-Based Solar Cells and Their Evolution During Processing and Stress: Final Technical Report, 16 October 2001 - 31 August 2005

Technical Report · Thu Feb 01 00:00:00 EST 2007

DOI:https://doi.org/10.2172/899988· OSTI ID:899988

Kaydanov, V I; Ohno, T R

This report describes basic issues behind CdTe/CdS cell performance and stability, such as the nature and electronic properties of impurities and defects that control the majority carrier concentration, mechanisms of dopant compensation, recombination processes, their nature and properties, migration and transformation of defects under various processing, stress, and operating conditions. We believe that a better basic understanding of the specific influence of grain boundaries, especially for fine-grain materials such as those making up CdTe-based cells, is now one of the most important issues we must address. We need to clarify the role of grain boundaries in forming the film electronic properties, as well as those of the p-n junction.

• Research Organization: National Renewable Energy Lab. (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC36-99-GO10337
• OSTI ID: 899988
• Report Number(s): NREL/SR-520-41129; ADJ-2-30630-05; TRN: US200709%%518
• Resource Relation: Related Information: Work performed by Colorado School of Mines, Golden, Colorado
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
DEFECTS
GRAIN BOUNDARIES
IMPURITIES
PERFORMANCE
P-N JUNCTIONS
PROCESSING
RECOMBINATION
SOLAR CELLS
STABILITY
TRANSFORMATIONS
ELECTROLUMINESCENCE
PHOTOLUMINESCENCE
CHARGE INJECTION SPECTROSCOPY
SCANNING TUNNELING MICROSCOPY
ELECTRODEPOSITION
ADMITTANCE SPECTROSCOPY
CAPACITANCE TRANSIENTS
DEEP ELECTRONIC STATES
CHEMICAL-BATH DEPOSITION
POST-DEPOSITION ANNEALING
GAS-TRANSPORT DEPOSITION
GAS-JET SYSTEM
OPTIMIZATION
Solar Energy - Photovoltaics