Reduction of Thermal Conductivity in Wafer-Bonded Silicon
Abstract
Blocks of silicon up to 3-mm thick have been formed by directly bonding stacks of thin wafer chips. These stacks showed significant reductions in the thermal conductivity in the bonding direction. In each sample, the wafer chips were obtained by polishing a commercial wafer to as thin as 36 {micro}m, followed by dicing. Stacks whose starting wafers were patterned with shallow dots showed greater reductions in thermal conductivity. Diluted-HF treatment of wafer chips prior to bonding led to the largest reduction of the effective thermal conductivity, by approximately a factor of 50. Theoretical modeling based on restricted conduction through the contacting dots and some conduction across the planar nanometer air gaps yielded fair agreement for samples fabricated without the HF treatment.
- Authors:
- Publication Date:
- Research Org.:
- Knolls Atomic Power Lab. (KAPL), Niskayuna, NY (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 896374
- Report Number(s):
- LM-06K135
TRN: US200703%%698
- DOE Contract Number:
- DE-AC12-00SN39357
- Resource Type:
- Conference
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; AIR; BONDING; POLISHING; SILICON; SIMULATION; THERMAL CONDUCTIVITY
Citation Formats
Liau, ZL, Danielson, LR, Fourspring, PM, Hu, L, Chen, G, and Turner, GW. Reduction of Thermal Conductivity in Wafer-Bonded Silicon. United States: N. p., 2006.
Web.
Liau, ZL, Danielson, LR, Fourspring, PM, Hu, L, Chen, G, & Turner, GW. Reduction of Thermal Conductivity in Wafer-Bonded Silicon. United States.
Liau, ZL, Danielson, LR, Fourspring, PM, Hu, L, Chen, G, and Turner, GW. 2006.
"Reduction of Thermal Conductivity in Wafer-Bonded Silicon". United States. https://www.osti.gov/servlets/purl/896374.
@article{osti_896374,
title = {Reduction of Thermal Conductivity in Wafer-Bonded Silicon},
author = {Liau, ZL and Danielson, LR and Fourspring, PM and Hu, L and Chen, G and Turner, GW},
abstractNote = {Blocks of silicon up to 3-mm thick have been formed by directly bonding stacks of thin wafer chips. These stacks showed significant reductions in the thermal conductivity in the bonding direction. In each sample, the wafer chips were obtained by polishing a commercial wafer to as thin as 36 {micro}m, followed by dicing. Stacks whose starting wafers were patterned with shallow dots showed greater reductions in thermal conductivity. Diluted-HF treatment of wafer chips prior to bonding led to the largest reduction of the effective thermal conductivity, by approximately a factor of 50. Theoretical modeling based on restricted conduction through the contacting dots and some conduction across the planar nanometer air gaps yielded fair agreement for samples fabricated without the HF treatment.},
doi = {},
url = {https://www.osti.gov/biblio/896374},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Nov 27 00:00:00 EST 2006},
month = {Mon Nov 27 00:00:00 EST 2006}
}