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Title: EFFECTS OF MATERIAL IMPROVEMENT ON CZT DETECTORS.

Conference ·
OSTI ID:893014

CZT material quality improvement has been achieved by optimizing the crystal growth process. N-type conductivity has been measured on as-grown, undoped, Cd{sub 0.9}Zn{sub 0.1}Te. Cd{sub 0.85}Zn{sub 0.15}Te crystals have been grown. for producing high resistivity CZT radiation detectors. The best FWHM of {sup 57}Co 122KeV spectrum was measured to be 3.7% and ({mu}{tau}){sub e} was 3 x 10{sup -3} cm{sup 2}V{sup -1}. The microscopic gamma ray response using a beam size of 10 {micro}m has been used to map the entire 4 mm x 4 mm detector. Several black spots indicating no signal responses were observed while all other areas showed an average of 65-70% collection efficiency. The black spots suggest that at those locations, the Te precipitates are larger than 10 {micro}m. Detailed microscopic infrared transmission measurement on the sample found that most Te precipitates have sizes of 4-6 {micro}m. Theoretical analysis of the results suggests that singly and doubly ionized Te{sub Cd}V{sub Cd}{sup 2} might be the shallow and deep donors previously assigned to Te{sub Cd} by us.

Research Organization:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Organization:
DOE/NNSA
DOE Contract Number:
DE-AC02-98CH10886
OSTI ID:
893014
Report Number(s):
BNL-77018-2006-CP; R&D Project: 10517; NN2001050; TRN: US0605919
Resource Relation:
Conference: SPIE, HARD X-RAY AND GAMMA-RAY DETECTOR PHYSICS VIII; SAN DIEGO, CA; 20060813 through 20060817
Country of Publication:
United States
Language:
English