On the Effect of the Film Hydrogen Content and Deposition Type on the Grain Nucleation and Grain Growth During Crystallization of a-Si:H Films: Preprint

Conference · Mon May 01 00:00:00 EDT 2006

DOI:https://doi.org/10.1109/WCPEC.2006.279795· OSTI ID:891549

Mahan, A H; Ahrenkiel, S P; Roy, B; Schropp, R E.I.; Li, H; Ginley, D S

We report the effect of the initial film hydrogen content (CH) on the crystallization kinetics, crystallite nucleation rate and grain growth rate when HWCVD and PECVD a-Si:H films are crystallized by annealing at 600 C. For the HWCVD films, both the incubation time and crystallization time decrease, and the full width at half maximum (FWHM) of the XRD (111) peak decreases with decreasing film CH. However, other sources of XRD line broadening exist in such materials in addition to crystallite size, including the density of crystallite defects. To address these issues, TEM measurements have also been performed on a-Si:H films deposited directly onto TEM grids.

• Research Organization: National Renewable Energy Lab. (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC36-99-GO10337
• OSTI ID: 891549
• Report Number(s): NREL/CP-520-39901; TRN: US200622%%91
• Resource Relation: Conference: Presented at the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4), 7-12 May 2006, Waikoloa, Hawaii
• Country of Publication: United States
• Language: English

Related Subjects

08 HYDROGEN
14 SOLAR ENERGY
36 MATERIALS SCIENCE
ANNEALING
CRYSTALLIZATION
DEFECTS
DEPOSITION
ENERGY CONVERSION
GRAIN GROWTH
HYDROGEN
INCUBATION
KINETICS
LINE BROADENING
NUCLEATION
X-RAY DIFFRACTION
PV
FILM HYDROGEN CONTENT
CRYSTALLIZATION KINETICS
CRYSTALLITE NUCLEATION RATE
GRAIN GROWTH RATE
FULL WIDTH AT HALF MAXIMUM (FWHM)
THIN FILMS
Solar Energy - Photovoltaics
Silicon Materials and Devices