Photovoltaic Cell And Manufacturing Process

Patent · Tue Nov 26 00:00:00 EST 1996

OSTI ID:879317

Albright, Scot P ^[1]; Chamberlin, Rhodes R ^[2]

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1. Lakewood, CO
2. El Paso, TX

Provided is a method for controlling electrical properties and morphology of a p-type material of a photovoltaic device. The p-type material, such as p-type cadmium telluride, is first subjected to heat treatment in an oxidizing environment, followed by recrystallization in an environment substantially free of oxidants. In one embodiment, the heat treatment step comprises first subjecting the p-type material to an oxidizing atmosphere at a first temperature to getter impurities, followed by second subjecting the p-type material to an oxidizing atmosphere at a second temperature, higher than the first temperature, to develop a desired oxidation gradient through the p-type material.

• DOE Contract Number: NREL-ZN-0-190-19-1
• Assignee: Photon Energy Inc. (Golden, CO)
• Patent Number(s): US 5578502
• Application Number: 08/572088
• OSTI ID: 879317
• Country of Publication: United States
• Language: English