Method For Plasma Source Ion Implantation And Deposition For Cylindrical Surfaces

Patent · Tue Dec 02 00:00:00 EST 1997

OSTI ID:879294

Fetherston, Robert P. ^[1]

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1. (Madison, WI), Shamim, Muhammad M. (Madison, WI), Conrad, John R. (Madison, WI)

Uniform ion implantation and deposition onto cylindrical surfaces is achieved by placing a cylindrical electrode in coaxial and conformal relation to the target surface. For implantation and deposition of an inner bore surface the electrode is placed inside the target. For implantation and deposition on an outer cylindrical surface the electrode is placed around the outside of the target. A plasma is generated between the electrode and the target cylindrical surface. Applying a pulse of high voltage to the target causes ions from the plasma to be driven onto the cylindrical target surface. The plasma contained in the space between the target and the electrode is uniform, resulting in a uniform implantation or deposition of the target surface. Since the plasma is largely contained in the space between the target and the electrode, contamination of the vacuum chamber enclosing the target and electrodes by inadvertent ion deposition is reduced. The coaxial alignment of the target and the electrode may be employed for the ion assisted deposition of sputtered metals onto the target, resulting in a uniform coating of the cylindrical target surface by the sputtered material. The independently generated and contained plasmas associated with each cylindrical target/electrode pair allows for effective batch processing of multiple cylindrical targets within a single vacuum chamber, resulting in both uniform implantation or deposition, and reduced contamination of one target by adjacent target/electrode pairs.

• DOE Contract Number: 9-XC3-8362E-1
• Assignee: Wisconsin Alumni Research Foundation (Madison, WI)
• Patent Number(s): US 5693376
• Application Number: 08/494192
• OSTI ID: 879294
• Country of Publication: United States
• Language: English