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Title: Photovoltaic Cell Having A P-Type Polycrystalline Layer With Large Crystals

Patent ·
OSTI ID:879235

A photovoltaic cell has an n-type polycrystalline layer and a p-type polycrystalline layer adjoining the n-type polycrystalline layer to form a photovoltaic junction. The p-type polycrystalline layer comprises a substantially planar layer portion having relatively large crystals adjoining the n-type polycrystalline layer. The planar layer portion includes oxidized impurities which contribute to obtainment of p-type electrical properties in the planar layer portion.

DOE Contract Number:
NREL-ZN-0-119019-1
Assignee:
Photon Energy, Inc. (Golden, CO)
Patent Number(s):
US 5501744
Application Number:
08/274574
OSTI ID:
879235
Country of Publication:
United States
Language:
English

References (8)

Influence of interface on the electrical behaviour of CdSeî—¸CdTe photovoltaic cells journal December 1988
Screen Printed Thin Film CdS/CdTe Solar Cell journal April 1980
Preparation of Low Resistance Contact Electrode in Screen Printed CdS/CdTe Solar Cell journal December 1983
Growth and process optimization of CdTe and CdZnTe polycrystalline films for high efficiency solar cells journal May 1991
CdS/CdTe solar cells by the screen-printing-sintering technique: Fabrication, photovoltaic properties and applications journal January 1988
Large-area CdS/CdTe photovoltaic cells journal January 1988
Analysis of post deposition processing for CdTe/CdS thin film solar cells journal December 1991
Effect of Resistivity of CdS Sintered Film on Photovoltaic Properties of Screen-Printed CdS/CdTe Solar Cell journal December 1983

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