skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Monolithic integration of a MOSFET with a MEMS device

Patent ·
OSTI ID:875099
 [1];  [2]
  1. Albuquerque, NM
  2. Albuquerque, MN
+ Show Author Affiliations

An integrated microelectromechanical system comprises at least one MOSFET interconnected to at least one MEMS device on a common substrate. A method for integrating the MOSFET with the MEMS device comprises fabricating the MOSFET and MEMS device monolithically on the common substrate. Conveniently, the gate insulator, gate electrode, and electrical contacts for the gate, source, and drain can be formed simultaneously with the MEMS device structure, thereby eliminating many process steps and materials. In particular, the gate electrode and electrical contacts of the MOSFET and the structural layers of the MEMS device can be doped polysilicon. Dopant diffusion from the electrical contacts is used to form the source and drain regions of the MOSFET. The thermal diffusion step for forming the source and drain of the MOSFET can comprise one or more of the thermal anneal steps to relieve stress in the structural layers of the MEMS device.

Research Organization:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
US 6531331
OSTI ID:
875099
Country of Publication:
United States
Language:
English

References (8)

A fabrication process for integrating polysilicon microstructures with post-processed CMOS circuits journal June 2000
Embedded interconnect and electrical isolation for high-aspect-ratio, SOI inertial instruments conference January 1997
A monolithic fully-integrated vacuum-sealed CMOS pressure sensor journal January 2002
CMOS-based microsensors and packaging journal August 2001
Laminated, sacrificial-poly MEMS technology in standard CMOS journal August 2000
Embedded micromechanical devices for the monolithic integration of MEMS and CMOS report July 1995
An integration process of micro electro mechanical polysilicon with CMOS analog/digital circuits journal December 1999
Integration of sputtered silicon microstructures with pre-fabricated CMOS circuitry journal July 2001

Similar Records

A novel method of fabricating integrated FETs for MEMS applications.
Journal Article · Tue Jul 01 00:00:00 EDT 2003 · Proposed for publication in the IEEE Journal of Microelectromechanical Systems. · OSTI ID:875099
+1 more
High voltage MOSFET devices and methods of making the devices
Patent · Tue Dec 15 00:00:00 EST 2015 · OSTI ID:875099
High voltage MOSFET devices and methods of making the devices
Patent · Tue Jun 23 00:00:00 EDT 2020 · OSTI ID:875099

Related Subjects

monolithic
integration
mosfet
mems
device
integrated
microelectromechanical
interconnected
common
substrate
method
integrating
fabricating
monolithically
conveniently
gate
insulator
electrode
electrical
contacts
source
drain
formed
simultaneously
structure
eliminating
process
steps
materials
structural
layers
doped
polysilicon
dopant
diffusion
form
regions
thermal
step
forming
anneal
relieve
stress
electrical contact
mems device
common substrate
/438/