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Title: Gamma-ray detector employing scintillators coupled to semiconductor drift photodetectors

Patent ·
OSTI ID:875061

Radiation detectors according to one embodiment of the invention are implemented using scintillators combined with a semiconductor drift photodetectors wherein the components are specifically constructed in terms of their geometry, dimensions, and arrangement so that the scintillator decay time and drift time in the photodetector pairs are matched in order to achieve a greater signal-to-noise ratio. The detectors may include electronics for amplification of electrical signals produced by the silicon drift photodetector, the amplification having a shaping time optimized with respect to the decay time of the scintillator and time spread of the signal in the silicon drift photodetector to substantially maximize the ratio of the signal to the electronic noise.

Research Organization:
Photon Imaging, Inc., Northridge, CA
DOE Contract Number:
FG03-97ER82451
Assignee:
Photon Imaging, Inc. (Northridge, CA)
Patent Number(s):
US 6521894
OSTI ID:
875061
Country of Publication:
United States
Language:
English

References (4)

Fast silicon drift photodiodes free from bias connections on the light entering side
  • Castoldi, A.; Chen, W.; Gatti, E.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 439, Issue 2-3 https://doi.org/10.1016/S0168-9002(99)00935-3
journal January 2000
Performances of a silicon drift chamber as fast scintillator photodetector for gamma-ray spectroscopy journal June 1998
Ultrathin entrance windows for silicon drift detectors
  • Hartmann, R.; StrĂ¼der, L.; Kemmer, J.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 387, Issue 1-2 https://doi.org/10.1016/S0168-9002(96)01000-5
journal March 1997
Silicon drift photodiode array detectors journal June 1996