Surface preparation of substances for continuous convective assembly of fine particles
Patent
·
OSTI ID:875057
- Rochester, MN
A method for producing periodic nanometer-scale arrays of metal or semiconductor junctions on a clean semiconductor substrate surface is provided comprising the steps of: etching the substrate surface to make it hydrophilic, forming, under an inert atmosphere, a crystalline colloid layer on the substrate surface, depositing a metal or semiconductor material through the colloid layer onto the surface of the substrate, and removing the colloid from the substrate surface. The colloid layer is grown on the clean semiconductor surface by withdrawing the semiconductor substrate from a sol of colloid particles.
- Research Organization:
- California Institute of Technology (CalTech), Pasadena, CA (United States)
- DOE Contract Number:
- FG03-88ER13932
- Assignee:
- California Institute of Technology (Pasadena, CA)
- Patent Number(s):
- US 6521541
- OSTI ID:
- 875057
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
surface
preparation
substances
continuous
convective
assembly
fine
particles
method
producing
periodic
nanometer-scale
arrays
metal
semiconductor
junctions
clean
substrate
provided
comprising
steps
etching
hydrophilic
forming
inert
atmosphere
crystalline
colloid
layer
depositing
material
removing
grown
withdrawing
sol
semiconductor material
substrate surface
inert atmosphere
semiconductor surface
fine particle
semiconductor junction
/438/427/
preparation
substances
continuous
convective
assembly
fine
particles
method
producing
periodic
nanometer-scale
arrays
metal
semiconductor
junctions
clean
substrate
provided
comprising
steps
etching
hydrophilic
forming
inert
atmosphere
crystalline
colloid
layer
depositing
material
removing
grown
withdrawing
sol
semiconductor material
substrate surface
inert atmosphere
semiconductor surface
fine particle
semiconductor junction
/438/427/