Light sources based on semiconductor current filaments

Patent · Wed Jan 01 00:00:00 EST 2003

OSTI ID:874983

Zutavern, Fred J ^[1]; Loubriel, Guillermo M ^[1]; Buttram, Malcolm T ^[2]; Mar, Alan ^[1]; Helgeson, Wesley D ^[1]; O'Malley, Martin W ^[3]; Hjalmarson, Harold P ^[1]; Baca, Albert G ^[1]; Chow, Weng W ^[4]; Vawter, G Allen ^[1]

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1. Albuquerque, NM
2. Sandia Park, NM
3. Edgewood, NM
4. Cedar Crest, NM

The present invention provides a new type of semiconductor light source that can produce a high peak power output and is not injection, e-beam, or optically pumped. The present invention is capable of producing high quality coherent or incoherent optical emission. The present invention is based on current filaments, unlike conventional semiconductor lasers that are based on p-n junctions. The present invention provides a light source formed by an electron-hole plasma inside a current filament. The electron-hole plasma can be several hundred microns in diameter and several centimeters long. A current filament can be initiated optically or with an e-beam, but can be pumped electrically across a large insulating region. A current filament can be produced in high gain photoconductive semiconductor switches. The light source provided by the present invention has a potentially large volume and therefore a potentially large energy per pulse or peak power available from a single (coherent) semiconductor laser. Like other semiconductor lasers, these light sources will emit radiation at the wavelength near the bandgap energy (for GaAs 875 nm or near infra red). Immediate potential applications of the present invention include high energy, short pulse, compact, low cost lasers and other incoherent light sources.

• Research Organization: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
• DOE Contract Number: AC04-94AL85000
• Assignee: Sandia Corporation (Albuquerque, NM)
• Patent Number(s): US 6504859
• OSTI ID: 874983
• Country of Publication: United States
• Language: English

Related Subjects

light
sources
based
semiconductor
current
filaments
provides
type
source
produce
peak
power
output
injection
e-beam
optically
pumped
capable
producing
quality
coherent
incoherent
optical
emission
unlike
conventional
lasers
p-n
junctions
formed
electron-hole
plasma
inside
filament
hundred
microns
diameter
centimeters
initiated
electrically
insulating
region
produced
photoconductive
switches
provided
potentially
volume
energy
pulse
available
single
laser
emit
radiation
wavelength
near
bandgap
gaas
875
nm
infra
immediate
potential
applications
compact
cost
light source
power output
semiconductor switch
optically pump
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