Method for enhancing the solubility of boron and indium in silicon

Patent · Tue Jan 01 00:00:00 EST 2002

OSTI ID:874958

Sadigh, Babak ^[1]; Lenosky, Thomas J ^[2]; Giles, Martin ^[3]; Caturla, Maria-Jose ^[4]; Ozolins, Vidvuds ^[2]; Asta, Mark ^[5]; Theiss, Silva ^[6]; Foad, Majeed ^[7]; Quong, Andrew ^[4]

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1. Oakland, CA
2. Pleasanton, CA
3. Hillsborough, OR
4. Livermore, CA
5. Evanston, IL
6. St. Paul, MN
7. Santa Clara, CA

A method for enhancing the equilibrium solubility of boron and indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100.degree. C.; and for indium, a 1% tensile strain at 1100.degree. C., corresponds to an enhancement of the solubility by 200%.

• Research Organization: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
• DOE Contract Number: W-7405-ENG-48
• Assignee: The Regents of the University of California (Oakland, CA)
• Patent Number(s): US 6498078
• OSTI ID: 874958
• Country of Publication: United States
• Language: English

Related Subjects

method
enhancing
solubility
boron
indium
silicon
equilibrium
involves
first-principles
quantum
mechanical
calculations
determine
temperature
dependence
p-type
dopants
namely
strain
conditions
thermodynamic
size-mismatched
impurities
raised
significantly
substrate
strained
appropriately
example
compressive
raises
100
1100degree
tensile
corresponds
enhancement
200
silicon substrate
/438/