Field emission from bias-grown diamond thin films in a microwave plasma

Patent · Tue Jan 01 00:00:00 EST 2002

OSTI ID:874715

Gruen, Dieter M ^[1]; Krauss, Alan R ^[2]; Ding, Ming Q ^[3]; Auciello, Orlando ^[4]

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1. Downers Grove, IL
2. Naperville, IL
3. Beijing, CN
4. Bolinbrook, IL

A method of producing diamond or diamond like films in which a negative bias is established on a substrate with an electrically conductive surface in a microwave plasma chemical vapor deposition system. The atmosphere that is subjected to microwave energy includes a source of carbon, nitrogen and hydrogen. The negative bias is maintained on the substrate through both the nucleation and growth phase of the film until the film is continuous. Biases between -100V and -200 are preferred. Carbon sources may be one or more of CH.sub.4, C.sub.2 H.sub.2 other hydrocarbons and fullerenes.

• Research Organization: Argonne National Laboratory (ANL), Argonne, IL (United States)
• DOE Contract Number: W-31109-ENG-38
• Assignee: The University of Chicago (Chicago, IL)
• Patent Number(s): US 6447851
• OSTI ID: 874715
• Country of Publication: United States
• Language: English

Related Subjects

field
emission
bias-grown
diamond
films
microwave
plasma
method
producing
negative
bias
established
substrate
electrically
conductive
surface
chemical
vapor
deposition
atmosphere
subjected
energy
source
carbon
nitrogen
hydrogen
maintained
nucleation
growth
phase
film
continuous
biases
-100v
-200
sources
chsub4
csub2
hsub2
hydrocarbons
fullerenes
electrically conductive
vapor deposition
chemical vapor
microwave energy
field emission
carbon source
microwave plasma
conductive surface
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