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Title: Thermally-induced voltage alteration for analysis of microelectromechanical devices

Patent ·
OSTI ID:874530
 [1]
  1. Albuquerque, NM
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A thermally-induced voltage alteration (TIVA) apparatus and method are disclosed for analyzing a microelectromechanical (MEM) device with or without on-board integrated circuitry. One embodiment of the TIVA apparatus uses constant-current biasing of the MEM device while scanning a focused laser beam over electrically-active members therein to produce localized heating which alters the power demand of the MEM device and thereby changes the voltage of the constant-current source. This changing voltage of the constant-current source can be measured and used in combination with the position of the focused and scanned laser beam to generate an image of any short-circuit defects in the MEM device (e.g. due to stiction or fabrication defects). In another embodiment of the TIVA apparatus, an image can be generated directly from a thermoelectric potential produced by localized laser heating at the location of any short-circuit defects in the MEM device, without any need for supplying power to the MEM device. The TIVA apparatus can be formed, in part, from a scanning optical microscope, and has applications for qualification testing or failure analysis of MEM devices.

Research Organization:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
US 6407560
OSTI ID:
874530
Country of Publication:
United States
Language:
English

References (6)

Detection and characterization of failures and defects in LSI chips by optical beam induced resistance changes (OBIRCH) book January 1998
Thermal and Optical Enhancements to Liquid Crystal Hot Spot Detection Methods conference October 1997
TIVA and SEI developments for enhanced front and backside interconnection failure analysis journal June 1999
New non-bias optical beam induced current (NB-OBIC) technique for evaluation of Al interconnects conference January 1995
Various Contrasts Identifiable From the Backside of a Chip by 1.3μm Laser Beam Scanning and Current Change Imaging conference November 1996
New capabilities of OBIRCH method for fault localization and defect detection conference January 1997

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thermally-induced
voltage
alteration
analysis
microelectromechanical
devices
tiva
apparatus
method
disclosed
analyzing
device
on-board
integrated
circuitry
embodiment
constant-current
biasing
scanning
focused
laser
beam
electrically-active
produce
localized
heating
alters
power
demand
changes
source
changing
measured
combination
position
scanned
generate
image
short-circuit
defects
due
stiction
fabrication
generated
directly
thermoelectric
potential
produced
location
supplying
formed
optical
microscope
applications
qualification
testing
failure
laser beam
integrated circuit
electric potential
mechanical device
electromechanical devices
microelectromechanical device
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