Fabrication of photonic band gap materials

Patent · Tue Jan 01 00:00:00 EST 2002

OSTI ID:874202

Constant, Kristen ^[1]; Subramania, Ganapathi S ^[1]; Biswas, Rana ^[1]; Ho, Kai-Ming ^[1]

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1. Ames, IA

A method for forming a periodic dielectric structure exhibiting photonic band gap effects includes forming a slurry of a nano-crystalline ceramic dielectric or semiconductor material and monodisperse polymer microspheres, depositing a film of the slurry on a substrate, drying the film, and calcining the film to remove the polymer microspheres therefrom. The film may be cold-pressed after drying and prior to calcining. The ceramic dielectric or semiconductor material may be titania, and the polymer microspheres may be polystyrene microspheres.

• Research Organization: Ames Laboratory (AMES), Ames, IA; Iowa State Univ., Ames, IA (United States)
• DOE Contract Number: W-7405-ENG-82
• Assignee: The United States of America as represented by the United States Department (Washington, DC)
• Patent Number(s): US 6339030
• Application Number: 09/477,191
• OSTI ID: 874202
• Country of Publication: United States
• Language: English

Related Subjects

fabrication
photonic
band
gap
materials
method
forming
periodic
dielectric
structure
exhibiting
effects
slurry
nano-crystalline
ceramic
semiconductor
material
monodisperse
polymer
microspheres
depositing
film
substrate
drying
calcining
remove
cold-pressed
prior
titania
polystyrene
semiconductor material
band gap
photonic band
dielectric structure
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