Low-bandgap double-heterostructure InAsP/GaInAs photovoltaic converters

Patent · Mon Jan 01 00:00:00 EST 2001

OSTI ID:874044

Wanlass, Mark W ^[1]

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1. Golden, CO

A low-bandgap, double-heterostructure PV device is provided, including in optical alignment a first InP.sub.1-y As.sub.y n-layer formed with an n-type dopant, an Ga.sub.x In.sub.1-x As absorber layer, the absorber layer having an n-region formed with an n-type dopant and an p-region formed with a p-type dopant to form a single pn-junction, and a second InP.sub.1-y As.sub.y p-layer formed with a p-type dopant, wherein the first and second layers are used for passivation and minority carrier confinement of the absorber layers.

• Research Organization: Midwest Research Institute, Kansas City, MO (United States)
• DOE Contract Number: AC36-99GO10337
• Assignee: Midwest Research Institute (Kansas City, MO)
• Patent Number(s): US 6300557
• OSTI ID: 874044
• Country of Publication: United States
• Language: English

Related Subjects

low-bandgap
double-heterostructure
inasp
gainas
photovoltaic
converters
pv
device
provided
including
optical
alignment
inp
1-y
n-layer
formed
n-type
dopant
1-x
absorber
layer
n-region
p-region
p-type
form
single
pn-junction
p-layer
layers
passivation
minority
carrier
confinement
n-type dopant
optical alignment
layer formed
minority carrier
p-type dopant
absorber layer
region formed
type dopant
carrier confinement
pv device
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