Process for Polycrystalline film silicon growth
- Littleton, CO
- Evergreen, CO
A process for depositing polycrystalline silicon on substrates, including foreign substrates, occurs in a chamber at about atmospheric pressure, wherein a temperature gradient is formed, and both the atmospheric pressure and the temperature gradient are maintained throughout the process. Formation of a vapor barrier within the chamber that precludes exit of the constituent chemicals, which include silicon, iodine, silicon diiodide, and silicon tetraiodide. The deposition occurs beneath the vapor barrier. One embodiment of the process also includes the use of a blanketing gas that precludes the entrance of oxygen or other impurities. The process is capable of repetition without the need to reset the deposition zone conditions.
- Research Organization:
- Midwest Research Institute, Kansas City, MO (United States)
- DOE Contract Number:
- AC36-98GO10337
- Assignee:
- Midwest Research Institute (Kansas City, MO)
- Patent Number(s):
- US 6281098
- OSTI ID:
- 873955
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
polycrystalline
film
silicon
growth
depositing
substrates
including
foreign
occurs
chamber
atmospheric
pressure
temperature
gradient
formed
maintained
throughout
formation
vapor
barrier
precludes
exit
constituent
chemicals
iodine
diiodide
tetraiodide
deposition
beneath
embodiment
blanketing
gas
entrance
oxygen
impurities
capable
repetition
reset
zone
conditions
polycrystalline film
deposition zone
temperature gradient
atmospheric pressure
polycrystalline silicon
crystalline silicon
film silicon
deposition occurs
foreign substrates
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