All-vapor processing of p-type tellurium-containing II-VI semiconductor and ohmic contacts thereof
Patent
·
OSTI ID:873809
- Elkton, MD
An all dry method for producing solar cells is provided comprising first heat-annealing a II-VI semiconductor; enhancing the conductivity and grain size of the annealed layer; modifying the surface and depositing a tellurium layer onto the enhanced layer; and then depositing copper onto the tellurium layer so as to produce a copper tellurium compound on the layer.
- Research Organization:
- Univ. of Delaware, Newark, DE (United States)
- DOE Contract Number:
- XAK71760901
- Assignee:
- United States of America as represented by United States Department (Washington, DC)
- Patent Number(s):
- US 6251701
- Application Number:
- 09/516,686
- OSTI ID:
- 873809
- Country of Publication:
- United States
- Language:
- English
A treatment to allow contacting CdTe with different conductors [solar cells]
|
conference | January 1994 |
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Related Subjects
all-vapor
processing
p-type
tellurium-containing
ii-vi
semiconductor
ohmic
contacts
dry
method
producing
solar
cells
provided
comprising
heat-annealing
enhancing
conductivity
grain
size
annealed
layer
modifying
surface
depositing
tellurium
enhanced
copper
produce
compound
solar cell
solar cells
provided comprising
grain size
ohmic contact
ii-vi semiconductor
ohmic contacts
p-type tellurium-containing
tellurium-containing ii-vi
tellurium compound
p-type tellurium
dry method
/438/136/
processing
p-type
tellurium-containing
ii-vi
semiconductor
ohmic
contacts
dry
method
producing
solar
cells
provided
comprising
heat-annealing
enhancing
conductivity
grain
size
annealed
layer
modifying
surface
depositing
tellurium
enhanced
copper
produce
compound
solar cell
solar cells
provided comprising
grain size
ohmic contact
ii-vi semiconductor
ohmic contacts
p-type tellurium-containing
tellurium-containing ii-vi
tellurium compound
p-type tellurium
dry method
/438/136/