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Title: Memory device using movement of protons

Patent ·
OSTI ID:873441
 [1];  [2];  [3];  [4];  [5];  [6];  [7]
  1. 900 N. Randolph St., Arlington, VA 22203
  2. 8401 Spain Rd., Albuquerque, NM 87111
  3. 5513 Estrellita del Norte, NE., Albuquerque, NM 87111
  4. 12 Impasse de la Liberation, 38950 St. Martin le Vinoux, FR
  5. 3108 Vicky Ct., Garland, TX 75044
  6. 1512 Ridgeview Dr., Arlington, TX 76012-1940
  7. 428 Park Bend Dr., Richardson, TX 75081
+ Show Author Affiliations

An enhancement of an electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure during an anneal in an atmosphere containing hydrogen gas. Device operation is enhanced by concluding this anneal step with a sudden cooling. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronics elements on the same silicon substrate.

Research Organization:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
DOE Contract Number:
AC04-94AL85000
Assignee:
Warren, William L. (900 N. Randolph St., Arlington, VA 22203);Vanheusden, Karel J. R. (8401 Spain Rd., Albuquerque, NM 87111);Fleetwood, Daniel M. (5513 Estrellita del Norte, NE., Albuquerque, NM 87111);Devine, Roderick A. B. (12 Impasse de la Liberation, 38950 St. Martin le Vinoux, FR);Archer, Leo B. (3108 Vicky Ct., Garland, TX 75044);Brown, George A. (1512 Ridgeview Dr., Arlington, TX 76012-1940);Wallace, Robert M. (428 Park Bend Dr., Richardson, TX 75081)
Patent Number(s):
US 6159829
OSTI ID:
873441
Country of Publication:
United States
Language:
English

References (1)

Non-volatile memory device based on mobile protons in SiO2 thin films journal April 1997

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Related Subjects

memory
device
movement
protons
enhancement
electrically
written
element
utilizing
motion
dielectric
layer
surrounded
layers
confine
electrode
means
attached
surrounding
change
spatial
position
preferably
constructed
silicon-silicon
dioxide-silicon
layered
structure
introduced
anneal
atmosphere
containing
hydrogen
gas
operation
enhanced
concluding
step
sudden
cooling
operates
power
nonvolatile
radiation
tolerant
compatible
convention
silicon
processing
integration
microelectronics
elements
substrate
spatial position
layered structure
means attached
memory device
preferably constructed
atmosphere containing
containing hydrogen
memory element
dielectric layer
silicon layer
hydrogen gas
silicon substrate
silicon dioxide
radiation tolerant
surrounding layers
written memory
silicon-silicon dioxide-silicon
preferably nonvolatile
electrically written
electrode means
device operates
element utilizing
dioxide-silicon layered
layer surrounded
convention silicon
silicon layered
/438/