Method and apparatus for monitoring plasma processing operations
- Albuquerque, NM
- Rio Rancho, NM
The invention generally relates to various aspects of a plasma process, and more specifically the monitoring of such plasma processes. One aspect relates in at least some manner to calibrating or initializing a plasma monitoring assembly. This type of calibration may be used to address wavelength shifts, intensity shifts, or both associated with optical emissions data obtained on a plasma process. A calibration light may be directed at a window through which optical emissions data is being obtained to determine the effect, if any, that the inner surface of the window is having on the optical emissions data being obtained therethrough, the operation of the optical emissions data gathering device, or both. Another aspect relates in at least some manner to various types of evaluations which may be undertaken of a plasma process which was run, and more typically one which is currently being run, within the processing chamber. Plasma health evaluations and process identification through optical emissions analysis are included in this aspect. Yet another aspect associated with the present invention relates in at least some manner to the endpoint of a plasma process (e.g., plasma recipe, plasma clean, conditioning wafer operation) or discrete/discernible portion thereof (e.g., a plasma step of a multiple step plasma recipe). A final aspect associated with the present invention relates to how one or more of the above-noted aspects may be implemented into a semiconductor fabrication facility, such as the distribution of wafers to a wafer production system.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- DOE Contract Number:
- AC04-94AL85000
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Number(s):
- US 6132577
- OSTI ID:
- 873307
- Country of Publication:
- United States
- Language:
- English
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Method and apparatus for monitoring plasma processing operations
Method and apparatus for monitoring plasma processing operations
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apparatus
monitoring
plasma
processing
operations
relates
various
aspects
process
specifically
processes
aspect
manner
calibrating
initializing
assembly
type
calibration
address
wavelength
shifts
intensity
associated
optical
emissions
data
obtained
light
directed
window
determine
effect
inner
surface
therethrough
operation
gathering
device
types
evaluations
undertaken
run
typically
currently
chamber
health
identification
analysis
included
endpoint
recipe
clean
conditioning
wafer
discrete
discernible
portion
step
multiple
final
above-noted
implemented
semiconductor
fabrication
facility
distribution
wafers
production
semiconductor fabrication
various aspects
gathering device
fabrication facility
final aspect
intensity shifts
health evaluations
plasma step
emissions analysis
plasma processes
plasma health
process identification
calibration light
processing operations
plasma clean
conditioning wafer
data gathering
processing chamber
plasma monitoring
multiple step
monitoring assembly
obtained therethrough
monitoring plasma
address wavelength
above-noted aspects
step plasma
wafer operation
wafer production
wavelength shifts
aspect relates
optical emissions
inner surface
emissions data
plasma process
data obtained
plasma processing
various types
plasma recipe
aspect associated
discernible portion
optical emission
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