Silicon-integrated thin-film structure for electro-optic applications

Patent · Sat Jan 01 00:00:00 EST 2000

OSTI ID:873154

McKee, Rodney A ^[1]; Walker, Frederick Joseph ^[2]

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1. Kingston, TN
2. Oak Ridge, TN

A crystalline thin-film structure suited for use in any of an number of electro-optic applications, such as a phase modulator or a component of an interferometer, includes a semiconductor substrate of silicon and a ferroelectric, optically-clear thin film of the perovskite BaTiO.sub.3 overlying the surface of the silicon substrate. The BaTiO.sub.3 thin film is characterized in that substantially all of the dipole moments associated with the ferroelectric film are arranged substantially parallel to the surface of the substrate to enhance the electro-optic qualities of the film.

• Research Organization: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
• DOE Contract Number: AC05-96OR22464
• Assignee: UT-Battelle, LLC (Oak Ridge, TN)
• Patent Number(s): US 6103008
• OSTI ID: 873154
• Country of Publication: United States
• Language: English

Related Subjects

silicon-integrated
thin-film
structure
electro-optic
applications
crystalline
suited
phase
modulator
component
interferometer
semiconductor
substrate
silicon
ferroelectric
optically-clear
film
perovskite
batio
overlying
surface
characterized
substantially
dipole
moments
associated
arranged
parallel
enhance
qualities
semiconductor substrate
silicon substrate
substantially parallel
ferroelectric film
phase modulator
dipole moment
thin-film structure
electro-optic applications
dipole moments
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