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Title: Tuneable dielectric films having low electrical losses

Patent ·
OSTI ID:873121

The present invention is directed to a method for forming dielectric thin films having substantially reduced electrical losses at microwave and millimeter wave frequencies relative to conventional dielectric thin films. The reduction in losses is realized by dramatically increasing the grain sizes of the dielectric films, thereby minimizing intergranular scattering of the microwave signal due to grain boundaries and point defects. The increase in grain size is realized by heating the film to a temperature at which the grains experience regrowth. The grain size of the films can be further increased by first depositing the films with an excess of one of the compoents, such that a highly mobile grain boundary phase is formed.

Research Organization:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
DOE Contract Number:
AC04-94AL85000
Assignee:
Superconducting Core Technologies, Inc. (Golden, CO)
Patent Number(s):
US 6096127
OSTI ID:
873121
Country of Publication:
United States
Language:
English

References (9)

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Control of Liquid-Phase-Enhanced Discontinuous Grain Growth in Barium Titanate journal January 1987
Dielectric properties of fine‐grained barium titanate ceramics journal August 1985
(Ba+Sr)/Ti ratio dependence of the dielectric properties for (Ba 0.5 Sr 0.5 )TiO 3 thin films prepared by ion beam sputtering journal March 1994
Grain growth in donor-doped SrTiO 3 journal June 1990