Tuneable dielectric films having low electrical losses
- Albuquerque, NM
- Boise, ID
- Lakewood, CO
- Denver, CO
The present invention is directed to a method for forming dielectric thin films having substantially reduced electrical losses at microwave and millimeter wave frequencies relative to conventional dielectric thin films. The reduction in losses is realized by dramatically increasing the grain sizes of the dielectric films, thereby minimizing intergranular scattering of the microwave signal due to grain boundaries and point defects. The increase in grain size is realized by heating the film to a temperature at which the grains experience regrowth. The grain size of the films can be further increased by first depositing the films with an excess of one of the compoents, such that a highly mobile grain boundary phase is formed.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- DOE Contract Number:
- AC04-94AL85000
- Assignee:
- Superconducting Core Technologies, Inc. (Golden, CO)
- Patent Number(s):
- US 6096127
- OSTI ID:
- 873121
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
dielectric
films
electrical
losses
directed
method
forming
substantially
reduced
microwave
millimeter
wave
frequencies
relative
conventional
reduction
realized
dramatically
increasing
grain
sizes
minimizing
intergranular
scattering
signal
due
boundaries
defects
increase
size
heating
film
temperature
grains
experience
regrowth
increased
depositing
excess
compoents
highly
mobile
boundary
phase
formed
substantially reduced
microwave signal
grain boundaries
grain size
substantially reduce
grain boundary
millimeter wave
wave signal
reduced electric
grain sizes
reduced electrical
electrical losses
dielectric films
wave frequencies
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