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Title: Chemical vapor deposition of aluminum oxide

Patent ·
OSTI ID:872905
 [1];  [2];  [1]
  1. Cambridge, MA
  2. Cleveland, OH
+ Show Author Affiliations

An aluminum oxide film is deposited on a heated substrate by CVD from one or more alkylaluminum alkoxide compounds having composition R.sub.n Al.sub.2 (OR').sub.6-n, wherein R and R' are alkyl groups and n is in the range of 1 to 5.

Research Organization:
Midwest Research Institute, Kansas City, MO (United States)
DOE Contract Number:
AC02-83CH10093
Assignee:
President and Fellows of Harvard College (Cambridge, MA)
Patent Number(s):
US 6037003
OSTI ID:
872905
Country of Publication:
United States
Language:
English

References (6)

Oxygen‐based deep levels in metalorganic vapor phase epitaxy indium gallium arsenide journal August 1995
Characterization of epitaxial GaAs and Al x Ga 1− x As layers doped with oxygen journal May 1991
Chemical Vapor Deposition of Al2 O 3 Thin Films under Reduced Pressures journal April 1985
Alkoxide precursors for controlled oxygen incorporation during metalorganic vapor phase epitaxy GaAs and AlxGa1−xAs growth journal July 1994
Multiple deep levels in metalorganic vapor phase epitaxy GaAs grown by controlled oxygen incorporation journal August 1994
Dimethylaluminium alkoxides: a physico-chemical investigation journal January 1992

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Related Subjects

chemical
vapor
deposition
aluminum
oxide
film
deposited
heated
substrate
cvd
alkylaluminum
alkoxide
compounds
composition
6-n
alkyl
range
aluminum oxide
chemical vapor
vapor deposition
oxide film
heated substrate
alkoxide compound
oxide compounds
alkoxide compounds
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